IXFK 80N50P
IXFX 80N50P
Symbol
Test Conditions
Characteristic Values
PLUS 247 TM (IXFX) Outline
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
V DS = 20 V; I D = 0.5 I D25 , Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
45
70
12.7
1280
120
25
27
S
nF
pF
pF
ns
ns
t d(off)
t f
R G = 1 ? (External)
70
16
ns
ns
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Q g(on)
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
197
70
nC
nC
Dim.
4 - Drain (Collector)
Millimeter Inches
Min. Max. Min. Max.
Q gd
R thJC
R thCS
64
0.15
nC
0.12 ° CW
° C/W
A
A 1
A 2
b
b 1
b 2
4.83 5.21
2.29 2.54
1.91 2.16
1.14 1.40
1.91 2.13
2.92 3.12
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
C
D
E
0.61 0.80
20.80 21.34
15.75 16.13
.024 .031
.819 .840
.620 .635
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
e
L
L1
Q
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
.215 BSC
.780 .800
.150 .170
.220 0.244
I S
V GS = 0 V
80
A
R
4.32 4.83
.170 .190
I SM
V SD
t rr
Q RM
I RM
Repetitive
I F = I S , V GS = 0 V,
I F = 25 A, -di/dt = 100 A/ μ s
V R = 100 V, V GS = 0 V
0.6
6
200
1.5
200
A
V
ns
μ C
A
TO-264 (IXFK) Outline
Notes:
1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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